| PART |
Description |
Maker |
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| SFBUV60 BUV60.MOD |
50 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device
|
SEMELAB LTD
Seme LAB
|
| BSW66 BSW66-JQR-AR1 |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| BUV11 BUV11.MOD |
20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| 2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
| PHPT610035NK |
NPN/NPN high power double bipolar transistor
|
NXP Semiconductors
|
| SF2N4114 2N4114 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
TT electronics Semelab, Ltd.
Seme LAB
|
| SF_MJ14000 BUW38 MJ14000 SF_BUW38 MJ14000R1 |
70 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
|
